The circuit shown in the figure contains two diodes,each with a forward resistance of $30 \, \Omega$ and infinite backward resistance. If the battery is $3 \, V$,the current through the $50 \, \Omega$ resistance (in ampere) is

The barrier potential of a $P-N$ junction diode does not depend on:

In a $p-n$ junction diode not connected to any circuit:

The following table provides the set of values of $V$ and $I$ obtained for a given diode. Let the characteristics be nearly linear. Over this range,the forward and reverse bias resistance of the given diode respectively are:

Condition	$V$	$I$
Forward biasing	$2.0 \, V$	$60 \, mA$
Forward biasing	$2.4 \, V$	$80 \, mA$
Reverse biasing	$0 \, V$	$0 \, \mu A$
Reverse biasing	$-2 \, V$	$-0.25 \, \mu A$

The potential barrier in the depletion layer is due to

The diode used in the circuit shown in the figure has a constant voltage drop of $0.5\; V$ at all currents and a maximum power rating of $100\; mW$. What should be the value of the resistor $R$,connected in series with the diode,to obtain the maximum current? (in $\Omega$)